Advanced Numerical Methods and Software Approaches for Semiconductor Device Simulation

Advanced Numerical Methods and Software Approaches for Semiconductor Device Simulation

In this article we concisely present severalmodern strategiesthat are applicable to drift-dominated carriertransport in higher-orderdeterministicmodels such as the driftdiffusion,hydrodynamic, and quantumhydrodynamic systems. The approachesinclude extensions of “upwind” and artificialdksipation schemes, generalizationof the tradltional Scharfetter-Gummel approach, Petrov-Galerkin and streamline...

Semiconductor Device Simulation by a New Method of Solving Poisson, Laplace and Schrodinger Equations (RESEARCH NOTE)

In this paper, we have extended and completed our previous work, that was introducing a new method for finite differentiation. We show the applicability of the method for solving a wide variety of equations such as Poisson, Lap lace and Schrodinger. These equations are fundamental to the most semiconductor device simulators. In a section, we solve the Shordinger equation by this method in sever...

Physical Models for Semiconductor Device Simulation

Device simulation has two main purposes: to understand and to depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of the next device generation. Towards these goals, the quality of the implemented physical models is decisive, forcing heuristic t models to be replaced by \\rst-principle"-based models. Since transport schemes using moments o...

Tunneling Models for Semiconductor Device Simulation

Photoelectrochemical Methods for Semiconductor Device Processing

me usefulness and capabilities of photoelectrochemical processing of III-V semiconductors is presented. Examples include the etching of small period gratings, the formation of integral lenses, the decomposition of small bandgap semiconductors, the etching of ptype semiconductors, and the photoinitiated deposition of metal. The transport of carriers in the semiconductor and reactivity of the sur...